Persistent photocurrent effects in GaN/AlGaN multiquantum wells

[1]  Weiqi Wang,et al.  The Hall mobility and its relationship to the persistent photoconductivity of undoped GaN , 1999 .

[2]  David Vanderbilt,et al.  Polarization-based calculation of the dielectric tensor of polar crystals , 1997 .

[3]  Ming-Hsien Lee,et al.  Persistent photoconductivity in n-type GaN , 1997 .

[4]  A. Carlo,et al.  Well-width dependence of the ground level emission of GaN/AlGaN quantum wells , 2000 .

[5]  Pierre Lefebvre,et al.  Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells. , 1998 .

[6]  E. Haller,et al.  Persistent photoconductivity in n-type GaN , 1997 .

[7]  Guy Beadie,et al.  Persistent Photoconductivity in n-Type GaN , 1997 .

[8]  Isamu Akasaki,et al.  Deep level defects in n‐type GaN , 1994 .

[9]  A. Carlo,et al.  EFFECTS OF MACROSCOPIC POLARIZATION IN III-V NITRIDE MULTIPLE QUANTUM WELLS , 1999, cond-mat/9905186.

[10]  H. Okumura,et al.  The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN , 1998 .

[11]  C. D. Wang,et al.  Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures , 1998 .

[12]  F. Fang,et al.  Two-dimensional electron gas and persistent photoconductivity in AlxGa1-xN/GaN heterostructures , 1998 .

[13]  M. Khan,et al.  Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure , 1997 .

[14]  Theeradetch Detchprohm,et al.  Analysis of deep levels in n‐type GaN by transient capacitance methods , 1994 .

[15]  Jörg Neugebauer,et al.  Gallium vacancies and the yellow luminescence in GaN , 1996 .

[16]  J. C. Chen,et al.  Optical quenching of photoconductivity in GaN photoconductors , 1997 .

[17]  Edward T. Yu,et al.  Deep level defects in n-type GaN grown by molecular beam epitaxy , 1998 .

[18]  H. Okushi,et al.  Characterization of the dominant midgap levels in Si-doped GaN by optical-isothermal capacitance transient spectroscopy , 1997 .

[19]  Jaime A. Freitas,et al.  Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors , 1999 .

[20]  J. Pankove,et al.  Deep levels and persistent photoconductivity in GaN thin films , 1997 .