Resistance increase due to electromigration induced depletion under TSV

This paper focuses on the EM induced voiding in a line ended by a TSV, and proposes an analytical model based on the link between the monitored electrical resistance increase and the matter depletion flow.

[1]  Li Hong Yu,et al.  Design and fabrication of a reliability test chip for 3D-TSV , 2010, 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).

[2]  Cher Ming Tan,et al.  Electromigration performance of Through Silicon Via (TSV) - A modeling approach , 2010, Microelectron. Reliab..

[3]  R. Klein,et al.  The effect of a width transition on the electromigration reliability of Cu interconnects , 2008, 2008 IEEE International Reliability Physics Symposium.

[4]  M. Maglione,et al.  Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures , 2000 .

[5]  X. Federspiel,et al.  Effect of Joule heating on the determination of electromigration parameters , 2003, IEEE International Integrated Reliability Workshop Final Report, 2003.

[6]  Ping-Chuan Wang,et al.  Electromigration threshold in copper interconnects , 2001 .

[7]  Young-Joon Park,et al.  The impact of partially scaled metal barrier shunting on failure criteria for copper electromigration resistance increase in 65 nm technology , 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

[8]  Paul S. Ho,et al.  Electromigration reliability issues in dual-damascene Cu interconnections , 2002, IEEE Trans. Reliab..

[9]  I. Blech.  Electromigration in thin aluminum films on titanium nitride , 1976 .

[10]  N. Khan,et al.  Design for reliability in via middle and via last 3-D chipstacks incorporating TSVs , 2010, 2010 12th Electronics Packaging Technology Conference.

[11]  J. R. Lloyd,et al.  Black's law revisited - Nucleation and growth in electromigration failure , 2007, Microelectron. Reliab..

[12]  X. Federspiel,et al.  Electromigration threshold in copper interconnects and consequences on lifetime extrapolations , 2005, Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..

[13]  Robert Rosenberg,et al.  Electromigration path in Cu thin-film lines , 1999 .

[14]  Reiner Kirchheim,et al.  Atomistic and computer modeling of metallization failure of integrated circuits by electromigration , 1991 .

[15]  X. Federspiel,et al.  Extensive analysis of resistance evolution due to electromigration induced degradation , 2008 .

[16]  Yong Liu,et al.  Modeling of electromigration of the through silicon via interconnects , 2010, 2010 11th International Conference on Electronic Packaging Technology & High Density Packaging.

[17]  Lorena Anghel,et al.  Reliability approach of high density Through Silicon Via (TSV) , 2010, 2010 12th Electronics Packaging Technology Conference.

[18]  M. Korhonen,et al.  Stress evolution due to electromigration in confined metal lines , 1993 .

[19]  A. Toffoli,et al.  Enabling technologies for 3D chip stacking , 2008, 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).