A TCAD methodology for high-speed photodetectors
暂无分享,去创建一个
[1] Mitiko Miura-Mattausch,et al. Limit of validity of the drift-diffusion approximation for simulation of photodiode characteristics , 2004 .
[2] G. M. Dunn,et al. Transient response of photodetectors , 1996 .
[3] J. Bowers,et al. Ultrawide-band long-wavelength p-i-n photodetectors , 1987 .
[4] Steven H. Pepper,et al. Comparison of fast photodetector response measurements by optical heterodyne and pulse response techniques , 1991 .
[5] Sadao Adachi,et al. Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information , 1999 .
[6] Related Materials,et al. Conference proceedings, 1999 Eleventh International Conference on Indium Phosphide and Related Materials, May 16-20, 1999, Congress Center Davos, Davos, Switzerland , 1999 .
[7] K. Kazmierski,et al. C‐V measurement and modelization of GaInAs/InP heterointerface with traps , 1987 .
[8] Wolfgang Fichtner,et al. A GENERALIZED RAMO-SHOCKLEY THEOREM FOR CLASSICAL TO QUANTUM TRANSPORT AT ARBITRARY FREQUENCIES , 1996 .
[9] Yusuf Leblebici,et al. Transient simulation of heterojunction photodiodes-part II: analysis of resonant cavity enhanced photodetectors , 1995 .