Epitaxy of GaN(0001) and GaN(10$$\bar {1}$$1) Layers on Si(100) Substrate
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[1] S. Kukushkin,et al. Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template , 2018, physica status solidi (b).
[2] Qian Lin,et al. Review of the Global Trend of Interconnect Reliability for Integrated Circuit , 2018 .
[3] S. Kukushkin,et al. Semipolar AlN on Si(100) , 2017 .
[4] M. Cecchini,et al. Ultrastructural Characterization of the Lower Motor System in a Mouse Model of Krabbe Disease , 2016, Scientific Reports.
[5] P. Mitchell,et al. Assessment of polygenic effects links primary open-angle glaucoma and age-related macular degeneration , 2016, Scientific Reports.
[6] Y. Kumagai,et al. Structural and Optical Properties of Thick Freestanding AlN Films Prepared by Hydride Vapor Phase Epitaxy , 2012 .
[7] S. Chang,et al. Single Crystalline GaN Epitaxial Layer Prepared on Nano-Patterned Si(001) Substrate , 2011 .
[8] M. Kompan,et al. Raman scattering in mosaic silicon carbide films , 2010 .
[9] Z. Cui. Nanofabrication: Principles, Capabilities and Limits , 2008 .
[10] J. Massies,et al. Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy , 2005 .
[11] O. Orlov,et al. Technology for nanoperiodic doping of a metal–oxide–semiconductor field-effect transistor channel using a self-forming wave-ordered structure , 2003 .
[12] S. Kukushkin,et al. Semipolar AlN and GaN on Si(100): HVPE technology and layer properties , 2017 .