An investigation of the RF/analog characteristics of multiple variants SiGe HBTs for optical and wireless applications

Multiple variants of SiGe HBTs, using selected collector implants, suitable for wired and wireless applications were explored. The RF/analog characteristics of HBTs featured with fT/BV/sub CEO/ values of 130 GHz/2.3 V, 80 GHz/3.4 V and 60 GHz/ 4.8 V were characterized. The dependence of bias, temperature, frequency, noise, power, and geometry were investigated to provide designers with appropriate performance-breakdown design coverage and flexibility.