Read-Voltage Optimization for Finite Code Length in MLC NAND Flash Memory

In this paper, we propose an effective read-voltage optimization method for multi-level-cell (MLC) NAND flash memory to improve the performance of error correcting codes (ECCs) with finite blocklength. Specifically, we first obtain the maximal channel coding rate achievable at a given blocklength and error probability of quantized channel. Based on this finite-blocklength channel-coding rate (FCR), we convert the optimization problem into minimizing the error probability instead of the channel coding rate. Then, we develop a cross iterative search (CIS) method and the genetic algorithm to solve this optimization problem. In our simulations, for a well-designed LDPC code, our read-voltage optimization method improves program-and-erase (PE) endurance up to about 900 and 600 cycles against the maximizing the mutual information (MMI) and entropy-based optimization methods, respectively, at a frame-error-rate (FER) of $2\times 10^{-4}$.