Electrical characterization and reliability aspects of Zirconium Silicate films obtained from novel MOCVD precursors

For future technology generations, the replacement of silicon dioxide as gate dielectric in metal-oxide semiconductor devices becomes a challenging issue. Metal silicates are promising candidates in this context. In this paper, the potential of zirconium silicate films obtained by metal-organic chemical vapor deposition from a novel single-source precursor is shown. On basis of metal insulator semiconductor capacitors, data from capacitance-voltage, current-voltage, constant voltage stress, and constant current stress measurements are presented. Detected charge trapping phenomena, conduction mechanisms, and polarity dependence of device degradation are discussed.

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