论文信息 - Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes

Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes

Forty-GHz operation of SCFL static binary frequency dividers is demonstrated by monolithically integrating 0.1-/spl mu/m-gate InAlAs/InGaAs HEMTs and p-n diodes for the first time. The HEMT has an InP-recess-etch stopper in the InAlAs barrier and the standard deviation of the threshold voltage in a 2-inch wafer is reduced to 44 mV. The p-n diode is used as a level-shift diode because of its smaller size and lower resistance than those of conventional diodes using a Schottky gate of the HEMT. The reduced resistance and size result in shorter CR-time delays of the diodes and transmission delays of the interconnection. Thus, it is possible to make the most of high-speed performance of the HEMTs in the circuits by employing p-n diodes as level-shift diodes.

Hiroshi Ito | Yohtaro Umeda | Takatomo Enoki | K. Osafune | Yasunobu Ishii

[1] Hiroshi Ito,et al. SCFL static frequency divider using InAIAs/InGaAs/InP HEMTs , 1995, 1995 25th European Microwave Conference.

[2] April Brown,et al. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors , 1992 .

[3] Masami Tokumitsu,et al. A 31 GHz static frequency divider using Au/WSiN gate GaAs MESFETs , 1991 .

[4] Hiroshi Ito,et al. 0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD , 1995, Seventh International Conference on Indium Phosphide and Related Materials.

[5] D. Greenberg,et al. A recessed-gate InAlAs/n/sup +/-InP HFET with an InP etch-stop layer , 1992, IEEE Electron Device Letters.

[6] T. Sudo,et al. Analysis of High-Speed GaAs Source-Coupled FET Logic Circuits , 1984 .

[7] T. Enoki,et al. 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects , 1994 .

[8] R. Lai,et al. 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/ , 1994, IEEE Electron Device Letters.

[9] M. Hafizi,et al. 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology , 1992, IEEE Electron Device Letters.

[10] U. K. Mishra,et al. 25GHz Static Frequency Dividers in AlInAs-GalnAs HEMT Technology , 1988, 1988 IEEE International Solid-State Circuits Conference, 1988 ISSCC. Digest of Technical Papers.