Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes

This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0.18 μm CMOS processes dedicated to imaging. These results are compared to irradiated commercial sensor test results provided by the Jet Propulsion Laboratory to enlighten the differences between standard and pinned photodiode behaviors. Several types of energetic particles have been used (gamma rays, X-rays, protons and neutrons) to irradiate the studied devices. Both total ionizing dose (TID) and displacement damage effects are reported. The most sensitive parameter is still the dark current but some quantum efficiency and MOSFET characteristics changes were also observed at higher dose than those of interest for space applications. In all these degradations, the trench isolations play an important role. The consequences on radiation testing for space applications and radiation-hardening-by-design techniques are also discussed.

[1]  P. Magnan,et al.  Multilevel RTS in Proton Irradiated CMOS Image Sensors Manufactured in a Deep Submicron Technology , 2008, IEEE Transactions on Nuclear Science.

[2]  B. R. Gossick,et al.  DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS , 1959 .

[3]  Andrew Holland,et al.  Gamma radiation damage study of 0.18 µm process CMOS image sensors , 2010, Astronomical Telescopes + Instrumentation.

[4]  Bedabrata Pain,et al.  Hardening CMOS imagers: radhard-by-design or radhard-by-foundry , 2004, SPIE Optics + Photonics.

[5]  G. R. Hopkinson,et al.  Random telegraph signals from proton-irradiated CCDs , 1993 .

[6]  G. D. Watkins.  Intrinsic defects in silicon , 2000 .

[7]  Eric R. Fossum,et al.  CMOS image sensors: electronic camera on a chip , 1995, Proceedings of International Electron Devices Meeting.

[8]  Y. Ishihara,et al.  An interline CCD image sensor with reduced image lag , 1984, IEEE Transactions on Electron Devices.

[9]  J. R. Srour,et al.  Universal damage factor for radiation-induced dark current in silicon devices , 2000 .

[10]  Boyd Fowler,et al.  Evaluation of 10 MeV Proton Irradiation on 5 . 5 Mpixel Scientific CMOS Image Sensor , 2010 .

[11]  J. Janesick,et al.  Scientific Charge-Coupled Devices , 2001 .

[12]  Cheryl J. Dale,et al.  Displacement damage extremes in silicon depletion regions , 1989 .

[13]  S. Girard,et al.  Displacement Damage Effects Due to Neutron and Proton Irradiations on CMOS Image Sensors Manufactured in Deep Submicron Technology , 2010, IEEE Transactions on Nuclear Science.

[14]  Allan R. Eisenman,et al.  Commercial Sensor Survey Fiscal Year 2009 master compendium radiation test report , 2008 .

[15]  Cheryl J. Dale,et al.  Proton-induced displacement damage distributions and extremes in silicon microvolumes charge injection device , 1990 .

[16]  G. Hopkinson.  Radiation effects in a CMOS active pixel sensor , 2000 .

[17]  B. Dierickx,et al.  Random telegraph signals in a radiation-hardened CMOS active pixel sensor , 2002 .

[18]  G. Vincent,et al.  Electric field effect on the thermal emission of traps in semiconductor junctions , 1979 .

[19]  A. El Gamal,et al.  CMOS image sensors , 2005, IEEE Circuits and Devices Magazine.

[20]  A. Mohammadzadeh,et al.  Random Telegraph Signals in Proton Irradiated CCDs and APS , 2007, IEEE Transactions on Nuclear Science.

[21]  Albert J. P. Theuwissen,et al.  Degradation of CMOS image sensors in deep-submicron technology due to γ-irradiation , 2008 .

[22]  B. Dierickx,et al.  Total dose and displacement damage effects in a radiation-hardened CMOS APS , 2003 .

[23]  P. Magnan,et al.  Overview of Ionizing Radiation Effects in Image Sensors Fabricated in a Deep-Submicrometer CMOS Imaging Technology , 2009, IEEE Transactions on Electron Devices.

[24]  Cheryl J. Dale,et al.  Displacement damage equivalent to dose in silicon devices , 1989 .

[25]  Matthew D. Wilson,et al.  A Low Noise Pixel Architecture for Scientific CMOS Monolithic Active Pixel Sensors , 2010 .

[26]  Mike Tyndel,et al.  A Low Noise Pixel Architecture for Scientific CMOS Monolithic Active Pixel Sensors , 2009, IEEE Transactions on Nuclear Science.

[27]  Wang Li,et al.  Evaluation of 10MeV proton irradiation on 5.5 Mpixel scientific CMOS image sensor , 2010, Remote Sensing.

[28]  T. Oldham,et al.  Total ionizing dose effects in MOS oxides and devices , 2003 .

[29]  P. Magnan,et al.  Total Dose Evaluation of Deep Submicron CMOS Imaging Technology Through Elementary Device and Pixel Array Behavior Analysis , 2008, IEEE Transactions on Nuclear Science.

[30]  J. David,et al.  Radiation-induced dark current in CMOS active pixel sensors , 2000 .

[31]  E. G. Stassinopoulos,et al.  The space radiation environment for electronics , 1988, Proc. IEEE.

[32]  Bart Dierickx,et al.  Enhanced dark current generation in proton-irradiated CMOS active pixel sensors , 2002 .

[33]  G. R. Hopkinson,et al.  Further measurements of random telegraph signals in proton irradiated CCDs , 1995 .

[34]  G. A. Soli,et al.  Total dose testing of a CMOS charged particle spectrometer , 1997 .

[35]  E. Eid,et al.  Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose , 2001 .

[36]  Guang Yang,et al.  Multi-megarad (Si) radiation-tolerant integrated CMOS imager , 2001, IS&T/SPIE Electronic Imaging.

[37]  P. Paillet,et al.  Analysis of Total Dose-Induced Dark Current in CMOS Image Sensors From Interface State and Trapped Charge Density Measurements , 2010, IEEE Transactions on Nuclear Science.

[38]  T. P. Ma,et al.  Ionizing radiation effects in MOS devices and circuits , 1989 .

[39]  J. R. Srour,et al.  Enhanced displacement damage effectiveness in irradiated silicon devices , 1989 .