SEMATECH's cycles of learning test for EUV photoresist and its applications for process improvement

With current progress in exposure source power, novel resist materials, and post processing techniques, EUV is getting closer to the production environment. As reported continuously, SEMATECH established cycles of learning program. The data generated from the program has been utilized to measure current state of the art of EUV photoresist for production or pilot line use. Thanks to SEMATECH core and associate members’ attention to the project, numerous EUV samples have been tested and they were based on the best performing EUV resists from associate members. This year we completed the evaluations for under-layers, lines and spaces, and contact holes. We also applied track based techniques to drive both low line edge roughness control and enlarge the process window with techniques such as FIRMTM and track based smoothing process. In this paper we will discuss about the results from cycles of learning test and show post-processing results of the three best line and space resists when combined with different FIRMTM materials.

[1]  Makoto Shimizu,et al.  Key parameters of EUV resists for contact hole applications , 2012, Advanced Lithography.

[2]  Dominic Ashworth,et al.  Line width roughness control and pattern collapse solutions for EUV patterning , 2011, Advanced Lithography.

[3]  Sunyoung Koo,et al.  Comparison study for 3x-nm contact hole CD uniformity between EUV lithography and ArF immersion double patterning , 2012, Advanced Lithography.

[4]  Julius Joseph Santillan,et al.  Alternative developer solutions for extreme ultraviolet resist , 2009 .

[5]  Ramakrishnan Ayothi,et al.  Novel EUV resist materials and process for 20nm half pitch and beyond , 2013, Advanced Lithography.

[6]  Hideaki Tsubaki,et al.  EUV Resist Materials Design for 15 nm Half Pitch and Below , 2013 .

[7]  Akiteru Ko,et al.  Resist process applications to improve EUV patterning , 2013, Advanced Lithography.

[8]  Marie Angelopoulos,et al.  Image collapse issues in photoresist , 2001, SPIE Advanced Lithography.

[9]  Robert L. Bruce,et al.  Pattern collapse mitigation strategies for EUV lithography , 2012, Advanced Lithography.

[10]  Roel Gronheid.  Impact of development chemistry on extreme ultraviolet resist performance , 2010 .

[11]  Akiteru Ko,et al.  Line width roughness control for EUV patterning , 2012, Advanced Lithography.

[12]  Carlos Fonseca,et al.  Optimum tone for various feature types: positive versus negative , 2001, SPIE Advanced Lithography.

[13]  Stefan Hien,et al.  Collapse behavior of single layer 193- and 157-nm resists: use of surfactants in the rinse to realize the sub-130-nm nodes , 2002, SPIE Advanced Lithography.

[14]  Hideaki Tsubaki,et al.  EUV resist materials design for 15nm half pitch and below , 2013, Advanced Lithography.

[15]  Alessandro Vaglio Pret,et al.  Quantification of shot noise contributions to contact hole local CD nonuniformity , 2012, Advanced Lithography.

[16]  T. Wallow,et al.  EUV resist performance: current assessment for sub-22-nm half-pitch patterning on NXE:3300 , 2012, Advanced Lithography.

[17]  Ken Maruyama,et al.  Novel EUV Resist Materials and Process for 20 nm Half Pitch and Beyond , 2013 .