Magnetic Random Access Memory(MRAM) having increased On/Off ratio and methods of manufacturing and operating the same

Disclosed are a magnetic random access memory device including an increased on/off ratio and manufacturing and operating methods thereof. The magnetic random access memory device according to one embodiment of the present invention includes a switching device and a storage node connected to the switching device. The storage node includes a magnetic node in which two opposite bits are simultaneously written. A source of the switching device is shared by an adjacent switching device. The storage node is vertically and successively laminated and includes two independent MTJs. Two bit lines are connected to the storage node. The storage node is formed between the two bit lines or under the two bit lines.