A dual-gate FET subharmonic injection-locked self-oscillating active integrated antenna for RF transmission

A planar subharmonic injection-locked GaAs dual-gate MESFET (DGMESFET) self-oscillating active integrated antenna (AIA) is presented for RF transmission. The oscillation is obtained with one gate of the DGMESFET at 2.052 GHz, and the stabilization of the oscillation is achieved by injecting a small subharmonic low-noise signal into the other gate of the DGMESFET. Phase noise was measured to be -98 dBc/Hz at the 10 KHz offset. The structure was shown to have the potential in performing triple functions of radiation, low noise oscillation and mixing (or modulation), a capability required for low cost wireless systems such as RFID tags and indoor positioning systems.

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