Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with a two temperatures process studied by transmission electron microscopy

The structural investigation of InGaN/GaN:Si multiple quantum well (MQW) samples grown by low‐pressure metal‐organic vapor phase epitaxy (LP‐MOVPE) in a two temperatures (2T) process on high‐pressure GaN mono‐crystalline substrates is performed by transmission electron microscopy (TEM). A sample in which barriers and wells were grown at 780 °C is compared with another in which the barriers were deposited at 900 °C and the wells at 730 °C. For both samples the indium composition in the QWs reaches the level of about 20 at.%. The local indium composition was measured through strain measurements by digital processing from the lattice fringes images taken by TEM. Cross‐sectional investigations are performed in two zone axes – [$1\bar {1}00$] and [$11\bar {2}0$] – with the use of axial and off‐axis illumination. During TEM investigations the formation of “false indium clusters ” of the size of 2–4 nm was observed for both samples just after 2 min of LaB6 electron beam illumination at 200 kV. Large lateral fluctuations of indium content in the QWs of the length of 30–130 nm were detected in 2T sample. The plan view analysis was carried out to characterize the anisotropy of the indium fluctuation inside the QWs.