Two yellow luminescence bands in undoped GaN

[1]  H. Morkoç,et al.  Thermal quenching of the yellow luminescence in GaN , 2018 .

[2]  Y. Makarov,et al.  Evaluation of the concentration of point defects in GaN , 2017, Scientific Reports.

[3]  H. Morkoç,et al.  Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence , 2016, Scientific Reports.

[4]  H. Morkoç,et al.  Zero-phonon line and fine structure of the yellow luminescence band in GaN , 2016 .

[5]  M. Reshchikov,et al.  Optically generated giant traps in high-purity GaN , 2016 .

[6]  Shengbai Zhang,et al.  Carbon as a source for yellow luminescence in GaN: Isolated CN defect or its complexes , 2015 .

[7]  In‐Hwan Lee,et al.  Deep traps in GaN-based structures as affecting the performance of GaN devices , 2015 .

[8]  M. Huber,et al.  Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors , 2015 .

[9]  A. Janotti,et al.  First‐principles theory of acceptors in nitride semiconductors , 2015 .

[10]  N. B. Smirnov,et al.  Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy , 2014 .

[11]  Alexander Usikov,et al.  Carbon defects as sources of the green and yellow luminescence bands in undoped GaN , 2014 .

[12]  D. Demchenko,et al.  Green luminescence in Mg-doped GaN , 2014 .

[13]  N. B. Smirnov,et al.  Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy , 2014 .

[14]  M. Reshchikov.  Time-resolved photoluminescence from defects in n-type GaN , 2014 .

[15]  Y. Makarov,et al.  Fine structure of the red luminescence band in undoped GaN , 2014 .

[16]  Anderson Janotti,et al.  Effects of carbon on the electrical and optical properties of InN, GaN, and AlN , 2014 .

[17]  M. Reshchikov,et al.  Superlinear increase of photoluminescence with excitation intensity in Zn-doped GaN , 2013 .

[18]  D. Demchenko,et al.  Yellow luminescence of gallium nitride generated by carbon defect complexes. , 2013, Physical review letters.

[19]  U. Honda,et al.  Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies , 2011 .

[20]  A. Kvasov,et al.  Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN , 2011 .

[21]  N. B. Smirnov,et al.  Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth , 2011 .

[22]  Anderson Janotti,et al.  Carbon impurities and the yellow luminescence in GaN , 2010 .

[23]  Feng Xu,et al.  Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films , 2010 .

[24]  E. Richter,et al.  Red luminescence from freestanding GaN grown on LiAlO2 substrate by hydride vapor phase epitaxy , 2007 .

[25]  U. Zeimer,et al.  Characterization of free standing GaN grown by HVPE on a LiAlO2 substrate , 2006 .

[26]  H. Morkoç,et al.  Luminescence properties of defects in GaN , 2005 .

[27]  James S. Speck,et al.  Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques , 2005 .

[28]  Lorinda Wu,et al.  Electrical characterisation of hole traps in n‐type GaN , 2004 .

[29]  Qing Yang,et al.  Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN , 2003 .

[30]  Chennupati Jagadish,et al.  Chemical origin of the yellow luminescence in GaN , 2002 .

[31]  W. J. Moore,et al.  Structural and optical properties of thick freestanding GaN templates , 2001 .

[32]  H. Morkoç,et al.  Comprehensive characterization of hydride VPE grown GaN layers and templates , 2001 .

[33]  O. Ambacher,et al.  Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN , 2001 .

[34]  B. Wessels,et al.  Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers , 2000 .

[35]  Rong Zhang,et al.  Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy , 1998 .

[36]  L. Dobrzyński,et al.  Observation Of Native Ga Vacancies In Gan By Positron Annihilation , 1997 .

[37]  Risto M. Nieminen,et al.  Point-defect complexes and broadband luminescence in GaN and AlN , 1997 .

[38]  S. Nakamura,et al.  Biaxial strain dependence of exciton resonance energies in wurtzite GaN , 1997 .

[39]  Jörg Neugebauer,et al.  Gallium vacancies and the yellow luminescence in GaN , 1996 .

[40]  Toshio Ogino,et al.  Mechanism of Yellow Luminescence in GaN , 1980 .

[41]  K. Rebane,et al.  Impurity spectra of solids , 1970 .

[42]  D. G. Thomas,et al.  Kinetics of Radiative Recombination at Randomly Distributed Donors and Acceptors , 1965 .