Ultrasensitive‐hot‐electron microbolometer

We present measurements on a novel power detector which can be used as an ultrasensitive detector of millimeter and submillimeter radiation. The absorbing element consists of a thin film resistor strip which is connected to superconducting electrodes. This device exploits the Andreev reflection of electrons and the weak electron‐phonon coupling at low temperatures to produce a large temperature rise for a small input power (≊10 mK/fW). The temperature rise of the electrons is detected by a tunnel junction where part of the metal strip forms the normal electrode. We have measured a voltage responsivity of approximately 109 V/W and an amplifier‐limited electrical noise equivalent power ≊3×10−18 W Hz−1/2 at an operating temperature of 100 mK. If infrared radiation were efficiently coupled to the absorbing element with an antenna or a waveguide, then the sensitivity of this detector would be at least a factor of 10 better than the best available direct detector operating at the same temperature.