GaAs interfacial self-cleaning by atomic layer deposition

The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied using in situ monochromatic x-ray photoelectron spectroscopy. Using the combination of in situ deposition and analysis techniques, the interfacial “self-cleaning” is shown to be oxidation state dependent as well as metal organic precursor dependent. Thermodynamics, charge balance, and oxygen coordination drive the removal of certain species of surface oxides while allowing others to remain. These factors suggest proper selection of surface treatments and ALD precursors can result in selective interfacial bonding arrangements.

[1]  S. Banerjee,et al.  GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric: Fabrication and characterization , 2007 .

[2]  H.C. Lin,et al.  Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric , 2007, IEEE Electron Device Letters.

[3]  E. Vogel,et al.  Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation , 2007 .

[4]  G. Dalapati,et al.  Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices , 2007, IEEE Transactions on Electron Devices.

[5]  Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100) , 2007 .

[6]  Yan-Kai Chiou,et al.  Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As , 2006 .

[7]  J. Locquet,et al.  High-K dielectrics for the gate stack , 2006 .

[8]  Y. J. Lee,et al.  Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al2O3 , 2005 .

[9]  David A. Muller,et al.  HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition , 2005 .

[10]  W. Jaegermann,et al.  Synchrotron photoemission spectroscopy study of ammonium hydroxide etching to prepare well-ordered GaAs(1 0 0) surfaces , 2004 .

[11]  Peide D. Ye,et al.  GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition , 2003 .

[12]  G. Lucovsky,et al.  Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films , 2002 .

[13]  A. Kummel,et al.  Relative reactivity of arsenic and gallium dimers and backbonds during the adsorption of molecular oxygen on GaAs(100)(6×6) , 2000 .

[14]  Paul W. Bohn,et al.  Production and evolution of composition, morphology, and luminescence of microcrystalline arsenic oxides produced during the anodic processing of (100) GaAs , 1999 .

[15]  M. Gendry,et al.  Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers. , 1994, Physical review. B, Condensed matter.

[16]  R. Osgood,et al.  Study of Thermal Oxide Solid-State Reaction on GaAs Surfaces , 1991 .

[17]  C. Watkins,et al.  Tertiary arsines: a new synthesis route and an NMR study , 1990 .

[18]  F. Himpsel,et al.  The oxidation of GaAs(110): A reevaluation , 1984 .