High Breakdown Voltage ( − 201 ) β-Ga 2 O 3 Schottky Rectifiers

β-Ga2O3 Schottky barrier diodes were fabricated in a vertical geometry structure consisting of Ni/Au rectifying contacts without edge termination on Si-doped epitaxial layers (10 μm, n∼4×1015 cm−3) on Sn-doped bulk Ga2O3 substrates with full-area Ti/Au back Ohmic contacts. The reverse breakdown voltage, V BR, was a function of rectifying contact area, ranging from 1600 V at 3.1×10−6 cm2 (20-μm diameter) to ∼250 V at 2.2×10−3 cm−2 (0.53-mm diameter). The current density near breakdown was not strongly dependent on contact circumference but did scale with contact area, indicating that the bulk current contribution was dominant. The lowest ON-state resistance, Ron, was 1.6 m · cm2 for the largest diode and 25 m ·cm2 for the 1600-V rectifier, leading to a Baliga figure-of-merit (V BR/Ron) for the latter of approximately 102.4 MW·cm−2. The ON-OFF ratio was measured at a forward voltage of 1.3 V and ranged from 3×107 to 2.5×106 for reverse biases from −5 to −40 V and showed only a small dependence on temperature in the range from 25 °C to 100 °C.

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