Laser projection UV lithography on subliming resists

One of the alldry microlithographic processes is considered which includes only two operat ions namely vacuum thermal evaporat ion of the res i st f i lm and subsequent patterning of the mask directly during exposure with laser radiation of A 266 nm. The mask patterning is performed on a projection lithography apparatus. Theoreticaland experimental results indicate that the proposed process permits formation of submicron features with high accuracy and relatively low requirements to the exposure dose control. 1 .