论文信息 - High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

[1] Gaudenzio Meneghesso,et al. 2.1 A/mm current density AlGaN/GaN HEMT , 2003 .

[2] Junxi Wang,et al. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD , 2007 .

[3] Chul-Young Kim,et al. Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer , 2003 .

[4] T. Nakayama,et al. Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate , 2004, IEEE Transactions on Microwave Theory and Techniques.

[5] U. Mishra,et al. 30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.

[6] Junxi Wang,et al. Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AlN/GaN heterostructures grown on sapphire substrates by MOCVD , 2006 .

[7] Junxi Wang,et al. The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures , 2006 .

[8] Tangsheng Chen,et al. Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates , 2005 .

[9] Liu Xinyu,et al. Growth and characterization of 0.8-μm gate length AlGaN/GaN HEMTs on sapphire substrates , 2005 .

[10] Osamu Oda,et al. High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy , 2004 .

[11] R. Coffie,et al. AlGaN/AlN/GaN high-power microwave HEMT , 2001, IEEE Electron Device Letters.