Performance of optimized Hgl-xCdxte long wavelength infrared photoconductors
暂无分享，去创建一个
[1] P. W. Norton,et al. The impact of characterization techniques on HgCdTe infrared detector technology , 1993 .
[2] Yael Nemirovsky,et al. Passivation of mercury cadmium telluride surfaces , 1989 .
[3] D. Arch,et al. High responsivity HgCdTe heterojunction photoconductor , 1985 .
[4] D. L. Smith,et al. Effects of blocking contacts on generation‐recombination noise and responsivity in intrinsic photoconductors , 1984 .
[5] D. Smith. Theory of generation‐recombination noise and responsitivity in overlap structure photoconductors , 1983 .
[6] T. Ashley,et al. Accumulation effects at contacts to n-type cadmium-mercury-telluride photoconductors , 1982 .
[7] D. Smith. Theory of generation-recombination noise in intrinsic photoconductors , 1982 .
[8] I. Kidron,et al. Contact and bulk effects in intrinsic photoconductive infrared detectors , 1981 .
[9] Y. Nemirovsky,et al. Diffusion of Indium in Hg1 − x Cd x Te , 1980 .
[10] M. A. Kinch,et al. Geometrical enhancement of HgCdTe photoconductive detectors , 1977 .
[11] Zheng Wei-jian,et al. Experimental studies on low frequency noise of Hg0.8Cd0.2 Te photoconductors , 1992 .