Photoinduced microchannels and element change inside silicon by femtosecond laser pulses

Abstract Microchannels are fabricated inside silicon along the direction of laser beam by a femtosecond laser at 800 nm, which is located at the absorption region of silicon. Formation mechanism of the microchannels is attributed to spherical aberration. The element change in surrounding of the microchannel is characterized, and results show that oxygen is incorporated into silicon after irradiation. The origin of the oxygen incorporation and the laser intensity dependence of the amount of oxygen are discussed, respectively.

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