Anti-interference circuit and storage element of static random access memory unit

The invention discloses an anti-interference circuit and a storage element of a static random access memory (SRAM) unit. The anti-interference circuit of the static random access memory unit comprises a first switch element and a capacitor which are connected in series and are respectively connected to storage nodes (Q, QB) of the static random access memory unit, the first switch element is controlled by a first word line (WLB), the first word line switches on and off the first switch element respectively during the period of read-write operation and keeping operation of the static random access memory unit. The anti-interference circuit has high anti-interference performance during the period of the keeping operation; in addition, when the SRAM unit reads and writes, the circumstance that the read-write speed slows down due to too many elements connected to the storage nodes is avoided.