论文信息 - Extraction of FET model noise-parameters from measurement

Extraction of FET model noise-parameters from measurement

A rigorous noise-parameter extraction technique for MESFETs and HEMTs is presented. This technique analytically extracts the FET current noise-parameters (P, R, and C) from the measured scattering and noise parameters. This procedure does not require curve fitting, optimization, or simplified noise models. The matrix-based extraction method is derived and shown to be reasonably robust. The sensitivity of this technique to experimental error is discussed.<<ETX>>

A. Riddle

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