Small valence band offsets of non-polar ZnO/Zn1 − xMgxO heterojunctions measured by X-ray photoelectron spectroscopy

[1]  Yang Li,et al.  Preparation and optical properties of ZnO/Zn0.9Mg0.1O multiple quantum well structures with various well widths grown on c-plane sapphire , 2013 .

[2]  Z. Ye,et al.  Structure and optical properties of a-plane ZnO/Zn0.9Mg0.1O multiple quantum wells grown on r-plane sapphire substrates by pulsed laser deposition , 2012 .

[3]  Z. Ye,et al.  Valence band offset of n-ZnO/p-MgxNi1−xO heterojunction measured by x-ray photoelectron spectroscopy , 2012 .

[4]  S. Alpay,et al.  Role of heteroepitaxial misfit strains on the band offsets of Zn1−xBexO/ZnO quantum wells: A first-principles analysis , 2012 .

[5]  B. Lu,et al.  Growth of p-type a-plane ZnO thin films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy , 2012 .

[6]  Yang Li,et al.  Preparation and properties of p-type Ag-doped ZnMgO thin films by pulsed laser deposition , 2012 .

[7]  Hao Wu,et al.  Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers , 2012 .

[8]  Z. Ye,et al.  p-type non-polar m-plane ZnO films grown by plasma-assisted molecular beam epitaxy , 2011 .

[9]  Z. G. Wang,et al.  The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy , 2010 .

[10]  A. Ashrafi.  Band offsets at ZnO/SiC heterojunction: Heterointerface in band alignment , 2010 .

[11]  M. Teisseire,et al.  Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates , 2010 .

[12]  Jung-Hoon Song,et al.  Investigation of nonpolar (1 1 2¯ 0) a-plane ZnO films grown under various Zn/O ratios by plasma-assisted molecular beam epitaxy , 2010 .

[13]  P. Jin,et al.  Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films , 2010 .

[14]  P. Godignon,et al.  Interfacial properties of AlN and oxidized AlN on Si , 2010 .

[15]  J. Zúñiga-Pérez,et al.  Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy , 2008 .

[16]  C. Shan,et al.  Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by x-ray photoelectron spectroscopy , 2008 .

[17]  Yujia Zeng,et al.  Electrical and optical properties of phosphorus-doped p-type ZnO films grown by metalorganic chemical vapor deposition , 2008 .

[18]  S. Park,et al.  Lattice relaxation mechanism of ZnO thin films grown on c-Al2O3 substrates by plasma-assisted molecular-beam epitaxy , 2007 .

[19]  Hongyuan Wei,et al.  Determination of the valence band offset of wurtzite InN /ZnO heterojunction by x-ray photoelectron spectroscopy , 2007 .

[20]  B. Zhao,et al.  Preparation of p-type ZnMgO thin films by Sb doping method , 2007 .

[21]  Y. Liu,et al.  Characterization of biaxial stress and its effect on optical properties of ZnO thin films , 2007 .

[22]  P. H. Jefferson,et al.  Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy , 2007 .

[23]  C. Liu,et al.  Photoluminescence and built-in electric field in ZnO∕Mg0.1Zn0.9O quantum wells , 2007 .

[24]  A. Kadri,et al.  Effects of lattice-mismatch induced built-in strain on the valence band properties of wurtzite ZnO/Zn1–xMgxO quantum well heterostructures , 2007 .

[25]  Seoung-Hwan Park,et al.  Spontaneous and piezoelectric polarization effects in wurtzite ZnO∕MgZnO quantum well lasers , 2005 .

[26]  K. Bajaj,et al.  Excitonic transitions in ZnO/MgZnO quantum well heterostructures , 2001 .

[27]  David C. Look,et al.  Recent Advances in ZnO Materials and Devices , 2001 .

[28]  C. Noguera,et al.  Polar oxide surfaces , 2000 .

[29]  T. Mason,et al.  Zinc self-diffusion, electrical properties, and defect structure of undoped, single crystal zinc oxide , 2000 .

[30]  Pierre Lefebvre,et al.  Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells. , 1998 .

[31]  Z. Fang.  Extension of the universal equation of state for solids in high-pressure phases , 1998 .

[32]  J. Waldrop,et al.  Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy , 1996 .

[33]  Cheung,et al.  CdTe-HgTe (1-bar 1-bar 1-bar) heterojunction valence-band discontinuity: A common-anion-rule contradiction. , 1986, Physical review letters.

[34]  E. A. Kraut,et al.  Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy , 1983 .