论文信息 - Spin diode in the ballistic regime

Spin diode in the ballistic regime

We propose a spin diode based on two semiconducting quantum wires coupled by a tunnel barrier. Applying a voltage and a magnetic field gradient between the two semiconductor wires, we obtain a spin current rectification device which operates in the ballistic regime. Using the scattering states formalism, we derive an exact analytic expression for the tunneling current. The characteristics $I(V,H)$ of the spin diode are determined.

A. Saxena | Darryl L. Smith | A. Bishop | D. Schmeltzer

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