论文信息 - A high speed SOI technology with 12 ps/18 ps gate delay operating at 5 V/1.5 V

A high speed SOI technology with 12 ps/18 ps gate delay operating at 5 V/1.5 V

A high speed Silicon-on-Insulator technology was developed, and a high performance circuit operating at very low power supply voltages was realized. The SOI MOSFETs fabricated on ultra-thin SOI film are fully-depleted and demonstrate excellent short channel behavior. At power supply voltage of V/sub DD/=1.5 V and room temperature, typical propagation delay of 18 ps/stage was obtained for depletion-mode NMOS inverter ring oscillator. The best result shows delay time of 14 ps/stage at V/sub DD/=1.5 V for ring oscillator fabricated on 500 AA SOI film with T/sub ox/=70 AA. This are the best results reported for power supply voltage of 1.5 V at room temperature.<<ETX>>

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