论文信息 - Defects in (111) 3C‐SiC layers grown at different temperatures by VLS and CVD on 6H‐SiC substrates - 字舞流文

Defects in (111) 3C‐SiC layers grown at different temperatures by VLS and CVD on 6H‐SiC substrates

G. Ferro | E. Polychroniadis | M. Marinova | J. Lorenzzi | N. Jegenyes | A. Andreadou | A. Mantzari