A comprehensive evaluation of SiC devices in traction applications

With the increasing attentions on electric vehicle (EV), hybrid electric vehicle (HEV) and Plug-in hybrid electric vehicle (PHEV), the significance of power electronics in traction power converter increased through the last decades. Having dominated for years, silicon is now reaching its material limits. As an alternative, wide band gap device such as silicon carbide (SiC) device received more attention. Market of SiC devices has been growing for years and major manufacture are now willing to participate in the SiC business. Physical properties gives SiC advantages over Si, such as high breakdown voltage, low drift region resistance, high temperature operation. For traction inverters, power loss in switches are discussed. It has been demonstrated that SiC devices have lower power losses than Si IGBT which also helps with the sizing and design of the heatsink. In DC-DC converters, the advantage of high switching frequency of SiC devices would have a hugh impact on the overall system for reducing the power loss, size of passive components and total weight. However, high cost, low productivity and reliability under harsh environment are problems facing by SiC devices currently and they are expected to be solved in the future.

[1]  R Rupp,et al.  Reliability of SiC power devices and its influence on their commercialization - review, status, and remaining issues , 2010, 2010 IEEE International Reliability Physics Symposium.

[2]  Dong Jiang Design and Control of High Power Density Motor Drive , 2011 .

[3]  L. Tolbert,et al.  Effects of silicon carbide (SiC) power devices on HEV PWM inverter losses , 2001, IECON'01. 27th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.37243).

[4]  Madhu Chinthavali,et al.  Design and analysis of a 55-kW air-cooled automotive traction drive inverter , 2011, 2011 IEEE Energy Conversion Congress and Exposition.

[5]  Chester Coomer,et al.  Evaluation of the 2010 Toyota Prius Hybrid Synergy Drive System , 2011 .

[6]  Hiroshi Sato,et al.  Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/L , 2011 .

[7]  Johann W. Kolar,et al.  SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors , 2011, IEEE Transactions on Industrial Electronics.

[8]  C. Zetterling,et al.  SiC power devices — Present status, applications and future perspective , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

[9]  Burak Ozpineci,et al.  System Impact of Silicon Carbide Power Electronics on Hybrid Electric Vehicle Applications , 2002 .

[10]  Hans-Peter Nee,et al.  Challenges Regarding Parallel Connection of SiC JFETs , 2013 .

[11]  Johann W. Kolar,et al.  A 120°C ambient temperature forced air-cooled normally-off SiC JFET automotive inverter system , 2011, APEC 2011.

[12]  A. Emadi,et al.  Traction inverters in hybrid electric vehicles , 2012, 2012 IEEE Transportation Electrification Conference and Expo (ITEC).