Interband Transition Distributions in the Optical Spectra of InAs/GaAs Self-Assembled Quantum Dots

The interband optical spectra of InAs/GaAs self-assembled quantum dots (SAD) are investigated with a three-dimensional eight-band k⋅p technique involving strain and piezoelectric effect. We show that the separation between hole states contributes to a significant fraction of the interband transition energy, thereby invalidating the two-dimensional harmonic oscillator model for the electronic structures of SADs. Moreover, aside from the threshold low energy peak which results from the strong ground state electron–hole transition, the major photoluminescence peaks observed experimentally are made of a significant number of equal-strength optical transitions.

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