Carrier transport and density of state distributions in pentacene transistors

Palo Alto Research Center, Palo Alto, California 94304~Received 06 May 2002; revised manuscript received 17 July 2002; published 27 November 2002!We present a density of state model for the transport properties of pentacene field effect transistors. Using aone-dimensional transistor model we study the effect of different localized trap distributions on the current-voltage characteristics of such devices. We find that a distributed trap model with a steep exponential band tailof donors and a shallower exponential tail of acceptors inside the band gap can describe consistently ourexperimental data obtained from bottom-gate polycrystalline pentacene transistors for different gate dielectricsand under various external conditions.DOI: 10.1103/PhysRevB.66.195336 PACS number~s!: 71.23.An, 72.80.Le, 85.30.De, 85.30.TvI. INTRODUCTION

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