Inhibition of Atomic Hydrogen Etching of Si(111)

Abstract : Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron-modified Si(111) - (V3xV3) - R30 surface was studied using temperature programmed desorption (TPD), high resolution electron energy loss spectroscopy (HREELS) and low energy electron diffraction (LEED). In comparison to the Si(111) - (7x7) surface, we observe a significantly reduced hydrogen saturation coverage, measured by TPD and HREELS, and the absence of silane production. The ordered (1/3 ML) subsurface boron atoms passivate the surface Si atoms and reduce their reactivity with atomic hydrogen. This leads to a surface condition causing suppression of silicon etching by atomic hydrogen, compared to the unmodified Si(111) - (7x7) surface.

[1]  R. Nuzzo,et al.  Chemical etching of Si(111)‐(7×7) and Al/Si(111) by atomic hydrogen , 1991 .

[2]  Cheng,et al.  H-induced surface restructuring on Si(100): Formation of higher hydrides. , 1991, Physical review. B, Condensed matter.

[3]  J. Boland.  Nature of the hydride species on the hydrogenated silicon (111)-(7 .times. 7) surface , 1991 .

[4]  Chen,et al.  Two reaction channels directly observed for atomic hydrogen on the Si(111)-7 x 7 surface. , 1991, Physical review. B, Condensed matter.

[5]  W. J. Choyke,et al.  An ESDIAD study of chemisorbed hydrogen on clean and H-exposed Si(111)-(7 × 7) , 1990 .

[6]  W. J. Choyke,et al.  Ni impurity effec̀ts on hydrogen surface chemistry and etching of Si(111) , 1990 .

[7]  E. Kaxiras,et al.  Adsorption of boron on Si(111): Physics, chemistry, and atomic‐scale electronic devices , 1990 .

[8]  L. Feldman,et al.  Energy-dependent vibrational spectra of the Si(111)-B surface , 1990 .

[9]  Chen,et al.  Surface doping and stabilization of Si(111) with boron. , 1989, Physical review letters.

[10]  S. Gates,et al.  Absolute coverage and decomposition kinetics of mono-, di-, and tri-hydride phases on Si(111)-(7×7) , 1989 .

[11]  Pate,et al.  Silicon (111) 2 x 1 surface states: K-edge transitions and surface-selective L2,3VV Auger line shape. , 1989, Physical review. B, Condensed matter.

[12]  M. Balooch,et al.  Modulated molecular‐beam studies of the surface chemistry of silicon reaction with reactive gases , 1987 .

[13]  Northrup,et al.  Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface. , 1987, Physical review. B, Condensed matter.

[14]  J. N. Russell,et al.  Methods in semiconductor surface chemistry , 1987 .

[15]  H. Wagner,et al.  Mono- and dihydride phases on silicon surfaces — a comparative study by EELS and UPS , 1984 .

[16]  H. Kobayashi,et al.  Reactions of atomic hydrogen with the Si(111) (7×7) surface by high resolution electron energy loss spectroscopy , 1983 .