An investigation into the temperature sensitivity of strained and unstrained multiple quantum-well, long wavelength lasers: new insight and methods of characterization

The magnitude of the temperature rate of change of the threshold current density (J/sub th/) is examined with respect to J/sub th/, for a variety of unstrained and strained, long wavelength multiple quantum-well (MQW) lasers. A strong correlation is found between these parameters, and a new relationship describing the J/sub th/-T relationship for these lasers is arrived at in terms of two new essentially temperature and length independent constants. A third constant, T/sub max/, also appears which estimates the theoretical maximum operating temperature of the laser. It is proposed that these constants may prove to be more useful in characterizing the temperature sensitivity of semiconductor lasers than the conventional parameters T/sub 0/ and I/sub 0/ which exhibit both a length and temperature dependence. Furthermore, an expression is found which relates the magnitude of T/sub max/ to adjustable device structural and material parameters, such as: the cavity length, L; facet reflectivity, R; transparency current density, J/sub tr/; and, the modal gain coefficient, /spl beta/. It is revealed that a close examination of this relationship may provide new insight into the physics of semiconductor lasers as well as a means for optimizing device design to obtain a high maximum operating temperature in order to eliminate the need for thermoelectric coolers in device packaging. Finally, the measured T/sub max/, versus L characteristics of six different strained and unstrained MQW laser structures are presented. >

[1]  Y. Yoshikuni,et al.  Unifying explanation for recent temperature sensitivity measurements of Auger recombination effects in strained InGaAs/InGaAsP quantum‐well lasers , 1993 .

[2]  U. Koren,et al.  Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions , 1983 .

[3]  J. Pankove,et al.  Temperature dependence of emission efficiency and lasing threshold in laser diodes , 1968 .

[4]  A. Haug,et al.  Temperature dependence of threshold current of In1-x GaxAsyP1-y lasers with different compositions , 1987 .

[5]  A. Haug.  Theory of the temperature dependence of the threshold current of an InGaAsP laser , 1985 .

[6]  M. Asada,et al.  The temperature dependence of the threshold current of GaInAsP/InP DH lasers , 1981, IEEE Journal of Quantum Electronics.

[7]  R. D. Yadvish,et al.  High temperature characteristics of InGaAsP/InP laser structures , 1993 .

[8]  C. Henry,et al.  The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers , 1983 .

[9]  W. Powazinik,et al.  Temperature dependence of threshold current in III‐V semiconductor lasers: Experimental prediction and explanation , 1984 .

[10]  D. L. Coblentz,et al.  Temperature dependence of long wavelength semiconductor lasers , 1992 .

[11]  Daniel T. Cassidy,et al.  Technique for measurement of the gain spectra of semiconductor diode lasers , 1984 .

[12]  Rajaram Bhat,et al.  High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications , 1994 .

[13]  Temperature dependence of threshold current in (GaIn)(AsP) DH lasers at 1.3 and 1.5 μm wavelength , 1981 .

[14]  M. Mohrle,et al.  Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers , 1991 .

[15]  O. Martínez,et al.  Temperature dependence of the threshold current of an InGaAsP laser under 130-ps electrical pulse pumping , 1984 .

[16]  J. Simmons,et al.  The dependence of the maximum operating temperature of long wavelength semiconductor lasers on physical and material device parameters , 1995, IEEE Photonics Technology Letters.

[17]  J. Schlafer,et al.  Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasers , 1993 .

[18]  T. Tanbun-ek,et al.  Reduced temperature dependence of threshold current by broadband enhanced feedback: A new approach and demonstration , 1992 .

[19]  O. Wada,et al.  Direct observation of electron leakage in InGaAsP/InP double heterostructure , 1982 .

[20]  Niloy K. Dutta,et al.  The case for Auger recombination in In1−xGaxAsyP1−y , 1982 .

[21]  H. Casey.  Temperature dependence of the threshold current density in InP‐Ga0.28In0.72As0.6P0.4 (λ=1.3 μm) double heterostructure lasers , 1984 .

[22]  H. Imai,et al.  Analysis of threshold temperature characteristics for InGaAsP/InP double heterojunction lasers , 1981 .

[23]  P. Dapkus,et al.  Threshold current analysis of compressive strain (0-1.8%) in low-threshold, long-wavelength quantum well lasers , 1993 .

[24]  Masahiro Asada,et al.  Gain and intervalence band absorption in quantum-well lasers , 1984 .

[25]  M. E. Givens,et al.  Temperature-dependent factors contributing to T0 in graded-index separate-confinement-heterostructure single quantum well lasers , 1987 .

[26]  L. Figueroa,et al.  Analysis of the high temperature characteristics of InGaAs-AlGaAs strained quantum-well lasers , 1992 .

[27]  N. Dutta,et al.  Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination , 1981 .

[28]  Tawee Tanbun-Ek,et al.  On the temperature sensitivity of semiconductor lasers , 1992 .

[29]  Henry Kressel,et al.  The temperature dependence of threshold current for double‐heterojunction lasers , 1979 .

[30]  Masahiro Asada,et al.  The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-y Lasers Related to Intervalence Band Absorption , 1980 .

[31]  P. Dapkus,et al.  Comparative study of low-threshold 1.3 mu m strained and lattice-matched quantum-well lasers , 1993, IEEE Photonics Technology Letters.

[32]  M. Pilkuhn,et al.  Temperature dependence of optical gain spectra in GaInAsP/InP double‐heterostructure lasers , 1981 .

[33]  Niloy K. Dutta,et al.  Temperature dependence of threshold of strained quantum well lasers , 1991 .

[34]  J. Shah,et al.  Influence of hot carriers on the temperature dependence of threshold in 1.3‐μm InGaAsP lasers , 1982 .

[35]  Junying Xu,et al.  Carrier loss resulting from Auger recombination in InGaAsP/InP double heterojunction laser diodes: Spectroscopy of 950 nm high energy emission , 1985 .

[36]  K. D. Chik.  A theoretical analysis of Auger recombination induced energetic carrier leakage in GaInAsP/InP double heterojunction lasers and light emitting diodes , 1988 .

[37]  Masahiro Asada,et al.  The effects of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 µm GalnAsP/InP lasers , 1983 .

[38]  A. Sugimura,et al.  Auger recombination effect on threshold current of InGaAsP quantum well lasers , 1983 .

[39]  B. Zheng,et al.  Temperature dependence of optical gain, quantum efficiency, and threshold current in GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers , 1989 .

[40]  Niloy K. Dutta,et al.  Temperature dependence of carrier lifetime and Auger recombination in 1.3 μm InGaAsP , 1985 .

[41]  D. Cassidy,et al.  Observation of dislocation stresses in InP using polarization‐resolved photoluminescence , 1992 .

[42]  Amnon Yariv,et al.  Carrier leakage and temperature dependence of InGaAsP lasers , 1983 .