Folded fully depleted Bulk+ technology as a highly W-scaled planar solution

This work proposes a Bulk+ planar fully depleted ldquofoldedrdquo technology as an innovative cost worthy solution for upcoming low power nodes. We report a detailed fabrication method, combining advanced selective epitaxy faceting and SON (Silicon-On-Nothing) process, to provide thin film/thin BOX devices with improved transistor gain beta for a given designed footprint Wdesign. We compare the fabrication between <110> channel, i.e. non-rotated wafer, and <100> channel, i.e. 45deg-rotated wafer, for the same (100) surface orientation.

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