‘Backgating’ model including self-heating for low-frequency dispersive effects in III-V FETs

A new approach is proposed which takes into account both traps and thermal phenomena for the modelling of deviations between static and dynamic drain current characteristics in III-V field effect transistors. The model is based on the well-known 'backgating' concept and can easily be identified on the basis of conventional static drain current characteristics and small-signal, low-frequency S parameters. Experimental results confirm the accuracy of the proposed model.