SiGe Source Charge Plasma TFET for Biosensing Applications

In this paper, a new TFET biosensor architecture has been proposed that is based on charge plasma technique in conjugation with a low energy bandgap source material i.e. SiGe. The proposed device sensitivity is compared with a conventional doped DG-TFET for biosensing applications. Charge density and dielectric constant of biosamples are used as the intrinsic properties that modulate the device characteristics. The charge plasma TFET shows excellent ION/IOFF ratio and a subthreshold swing steeper than the DG-TFET. In biosamples with higher dielectric constants, the sensitivity in CP-TFET is about 62% more than DG-TFET biosensor.

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