1.5 mu m multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE

1.5 μm band GaInAs multiple-quantum-well distributed feedback laser diodes have been successfully fabricated on InP grating substrates by metalorganic vapour phase epitaxy for the first time. Extremely low chirp single-longitudinal-mode operation at 2.4 Gbit/s RZ modulation has been realised.