EUVL is the most promising candidate of 32 nm generations and beyond. In this paper, we present Canon's development status of EUVL technologies. The system design of the EUV full field high volume manufacturing tool (VS2) is under way. The specification of VS2 is presented in this paper. The fabrication of six-aspheric-mirror prototype projection optics (PO1) of NA 0.3 has been started. The PO1 is fabricated to evaluate and improve our technologies of polishing and measuring the figure of mirrors. We present some results of the figuring accuracy of the mirror. EUVL will be required to resolve sub-twenty nm L&S patterns. We are studying off-axis illumination technologies and high- NA technologies. The simulation results of the resolution capability and the DOF are presented.