SOI/SOS MOSFET universal compact SPICE model with account for radiation effects

Universal SPICE model for submicron SOI/SOS MOSFETs based on BSIMSOI and EKV-SOI platforms with account for total ionizing dose-induced effects (TID), pulsed radiation effects, single events is presented. A special subcircuit consisting of parasitic transistors for sidewall and backgate leakage currents and other elements is connected to the standard SPICE model. In addition, the radiation-dependent parameters are described by physically based mathematical equations. Model parameter extraction methodology is described. Examples of rad-hard SOI/SOS CMOS circuits simulation are presented.

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