A 1/4-inch 8Mpixel back-illuminated stacked CMOS image sensor

In recent years, cellphone cameras have come to require much more diversification and increased functionalities, due to the strong growth of the smartphone market. In addition to the image quality, speed, and pixel counts that conventional image sensors require, there is high demand for new functions that can respond to various photo-taking scenes. We developed a stacked CMOS image sensor (CIS), composed of conventional back-illuminated (BI) image-sensor technology and 65nm standard logic technology.

[1]  S. Watanabe,et al.  A 1/1.8-inch 6.4MPixel 60 frames/s CMOS Image Sensor with Seamless Mode Change , 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

[2]  A. Suzuki,et al.  High-Speed Digital Double Sampling with Analog CDS on Column Parallel ADC Architecture for Low-Noise Active Pixel Sensor , 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

[3]  Shree K. Nayar,et al.  High dynamic range imaging: spatially varying pixel exposures , 2000, Proceedings IEEE Conference on Computer Vision and Pattern Recognition. CVPR 2000 (Cat. No.PR00662).

[4]  S. Iwabuchi,et al.  A Back-Illuminated High-Sensitivity Small-Pixel Color CMOS Image Sensor with Flexible Layout of Metal Wiring , 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

[5]  Keiji Mabuchi,et al.  A 1/2.3-inch 10.3Mpixel 50frame/s Back-Illuminated CMOS image sensor , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

[6]  Wei Zheng,et al.  The Mass Production of BSI CMOS Image Sensors , 2009 .

[7]  S. Watanabe,et al.  A 1/1.8-inch 6.4 MPixel 60 frames/s CMOS Image Sensor With Seamless Mode Change , 2006, IEEE Journal of Solid-State Circuits.