论文信息 - Voltage shifts of Fowler-Nordheim tunneling J-V plots in thin gate oxide MOS structures due to trapped charges

Voltage shifts of Fowler-Nordheim tunneling J-V plots in thin gate oxide MOS structures due to trapped charges

This paper describes a novel simulation of Fowler-Nordheim (F-N) tunneling of electrons from either tunneling interface, i.e. from the gate or the inversion layer of a p-type substrate into the oxide. It accounts for the effects of finite electron-hole pairs generation in the substrate and shapes of tunneling barrier created by charge trapped in the oxide for F-N tunneling.

Y. T. Yeow | S. J. Oh | Y. Yeow | S. Oh | S. Oh

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