论文信息 - Second‐order optical susceptibility of strained GeSi/Si superlattices

Second‐order optical susceptibility of strained GeSi/Si superlattices

A strain‐induced ordered phase has been observed recently in the alloy layers of a GeSi/Si strained‐layer superlattice in which the ordered unit cell is noncentrosymmetric. Using the bond‐charge model of Jha and Bloembergen [Phys. Rev. 171, 891 (1968)], the second‐order susceptibility and the linear electro‐optic (Pockels) coefficient of the GeSi layers are calculated and are found to be comparable in magnitude to those of GaAs.

Richard A. Soref | R. Soref | Lionel Friedman | L. Friedman

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