论文信息 - InGaAs MOSFETs for CMOS: Recent advances in process technology

InGaAs MOSFETs for CMOS: Recent advances in process technology

InGaAs has recently emerged as the most attractive non-Si n-channel material for future nano-scale CMOS. InGaAs n-channel MOSFETs promise to advance Moore's Law by allowing continued scaling through a reduction in footprint and operating voltage without compromising performance. This paper reviews recent advances in some of the key enabling process technology of InGaAs MOSFETs. It also outlines some of the challenges that need to be overcome before this new device family can become a reality.

[1] Y. Yeo,et al. Lattice-Mismatched $\hbox{In}_{0.4}\hbox{Ga}_{0.6} \hbox{As}$ Source/Drain Stressors With In Situ Doping for Strained $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel n-MOSFETs , 2009, IEEE Electron Device Letters.

[2] P. Ye,et al. Heteroepitaxy of single-crystal LaLuO3 on GaAs(111)A by atomic layer deposition , 2010 .

[3] A. Lochtefeld,et al. (Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS , 2010 .

[4] J. Alamo. Nanometre-scale electronics with III–V compound semiconductors , 2011, Nature.

[5] E. Vogel,et al. Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors , 2011 .

[6] Ivana,et al. Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs , 2012, 2011 International Semiconductor Device Research Symposium (ISDRS).

[7] A. Asenov,et al. Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric , 2011, IEEE Electron Device Letters.

[8] D. Antoniadis,et al. A Self-Aligned InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process , 2012 .

[9] B. Douhard,et al. Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique , 2013 .