论文信息 - A 3–8 GHz Low-Noise CMOS Amplifier

A 3–8 GHz Low-Noise CMOS Amplifier

A wideband CMOS low-noise amplifier (LNA) is proposed by using the concept of mutual coupling technique implemented through a symmetric center-tap inductor. A frequency widening network is designed with a center-tap inductor at the input and the output of an LNA to achieve bandwidth extension with a single stage amplifier. The proposed wideband low noise amplifier is implemented in the 0.18 mum CMOS technology. This design obtains a bandwidth of 3-8 GHz with a power consumption of 3.77 mW from a 1.8 V supply.

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