论文信息 - 4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles

4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles

Chemical vapor deposition of 4H-SiC on (0001) substrates with various off-angles from 1o to 45o has been investigated. On large-off-angled (15o-45o) substrates, very smooth surface morphology is obtained in the wide range of C/Si ratio. The micropipe dissociation during epitaxial growth is observed on 4o-45o off-angled substrates with a low C/Si ratio. The incorporation of nitrogen was dramatically suppressed by increasing C/Si ratio irrespective of substrate’s off-angle.

T. Kimoto | H. Saitoh

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