论文信息 - Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method. - 字舞流文

Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method.

H. A. Elgomati | P. Menon | Z. A. Noor Faizah | A. H. Afifah Maheran | F. Salehuddin | I. Ahmad | A. Mohd Zain | A. Roslan | E. Firhat