Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method.
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H. A. Elgomati | P. Menon | Z. A. Noor Faizah | A. H. Afifah Maheran | F. Salehuddin | I. Ahmad | A. Mohd Zain | A. Roslan | E. Firhat