Influence of surface bow on reconstruction on 2-inch SiC (0001) wafer

The step morphologies of a gas-etched 2-in. 6H-SiC (0001) wafer are investigated by the atomic force microscope. Due to the concave surface induced by bow, undulation surface morphologies were observed in the edge region. In the upside and downside region of the center along the 〈112¯0〉 miscut direction, ripples and bimodal steps are observed, respectively. In the other edge regions, a complex pattern of waves enveloped in microsteps was formed. The complex reorganized surface morphology is discussed by the viewpoint of the two or three-dimensional phase separation. Compared to the regular unit cell high steps, the formalism of waved surface is interpreted by competing free energy curve through changes in surface structure faceting, where the step separated at a specific orientation and favor to match to surface reconstruction with unit cell high steps.

[1]  Hiroki Hibino,et al.  Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces , 2010 .

[2]  A. Zangwill,et al.  Step bunching of vicinal 6H-SiC{0001} surfaces , 2009, 0903.2067.

[3]  Gong Gu,et al.  Step Formation on Hydrogen-etched 6H-SiC{0001} Surfaces , 2008 .

[4]  Satoru Tanaka,et al.  Ordering distance of surface nanofacets on vicinal 4H-SiC(0001). , 2007, Physical review letters.

[5]  Jeremy A. Yancey,et al.  Terrace width distributions for vicinal surfaces with steps of alternating stiffness , 2005 .

[6]  A. Nakajima,et al.  Step control of vicinal 6H–SiC(0001) surface by H2 etching , 2005 .

[7]  A. Leycuras,et al.  Regular step formation on concave-shaped surfaces on 6H-SiC(0 0 0 1) , 2004 .

[8]  Hiroshi Nakagawa,et al.  Self-ordering of nanofacets on vicinal SiC surfaces. , 2003, Physical review letters.

[9]  N. Teraguchi,et al.  Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching , 2000 .

[10]  Ellen D. Williams,et al.  Steps on surfaces: experiment and theory , 1999 .

[11]  Dieter Bimberg,et al.  Spontaneous ordering of nanostructures on crystal surfaces , 1999 .

[12]  H. Matsunami,et al.  Surface polarity dependence in step-controlled epitaxy: progress in SiC epitaxy , 1997 .

[13]  M. Kulakov Morphology of an as-grown surface of Sic — determination of step flow direction , 1996 .

[14]  D. Vanderbilt,et al.  Spontaneous formation of stress domains on crystal surfaces. , 1988, Physical review letters.

[15]  C. D. Lee,et al.  Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001) , 2001 .