论文信息 - Design of CMOS Inverter Using Different Aspect Ratios

Design of CMOS Inverter Using Different Aspect Ratios

The aim of this paper is to show the effect of W/L ratio parameters of CMOS, which characterized the CMOS structure. It is also analysis the current value, threshold voltage value and other related parameters of CMOS inverter. MOSFET device is the 4 terminal devices GATE, DRAIN, SOURCE AND BODY (substrate). W/L is the most important factor of CMOS. Hence considering we can change the value of W/L of CMOS and then measure the physical parameters to reach the accepted goal using Microwind 3.1 software.

[1] David Harris,et al. CMOS VLSI Design: A Circuits and Systems Perspective , 2004 .

[2] Martin Rieger. Application Specific Integrated Circuits (ASICs) , 2003 .

[3] Nishant Tripathi,et al. Design of 1.2Volt, 1GSPS, 2, 3, 4 And 6 Bit Flash ADC Using EIS Comparator and Fat Tree Encoder , 2014 .

[5] Wayne Wolf. Modern VLSI Design: IP-Based Design , 2008 .

[6] Shin Min Kang,et al. CMOS Digital Integrated Cir-cuits: Analysis and Design , 2002 .