Localized surface plasmon enhanced infrared photodetectors for uncooled imaging systems

Infrared imaging systems operating without cooling is a big challenge duo to the noise originated from the semiconductor materials used for the photodetectors in the imaging system. In this paper, we report significant enhancement of plasmonic structures to photodetection of midwave infrared radiation, which make the mid-wave imaging system possible for room temperature operation. By integrating a two-dimension metallic array with InAsSbbased heterojunction photodiode, the room temperature detectivity can be enhanced to about 1010 Jones with a response speed of around 600 ns. We also achieve a dual-band enhanced photodetection by integrating a hole array atop of a GaSb/InAsSb heterostructure. By making use of localized surface plasmons in semiconductors, we extend highsensitivity photodetection to millimetre and terahertz waves. A room-temperature noise equivalent power of about 10-13 WHz-1/2 is demonstrated. Our work on surface plasmon assisted infrared photodetection for room-temperature operation make future uncooled IR systems possible.

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