Reduced channel coupling effect during sensing of the nonvolatile memory element

By the amount of the channel will occur during a read channel coupled to the coupling amount occurring during the verification matches to reduce the coupling effect of the channel during read and verify the nonvolatile memory. All bit lines can be read and verified together during reading. In one embodiment, when each of the plurality of verifying the programmed state of the bit line to establish a first bias condition. When verifying each state may establish a first set of bias conditions alone. Bit line bias may be based on the nonvolatile memory element of the bit lines are being programmed to state. Establishing a separate second set of bias conditions for each state being read. For a given state to the second bias condition substantially matches the first state for a given bias condition.