Simulation of single-event upset in power MOSFETs

The effects of striking of ions on a low-voltage power MOSFET have been investigated in this work. Special emphasis has been given on the study of Single Event Gate Rupture (SEGR) event. The physics-based device simulation tools: Silvaco ATHENA and ATLAS are used for process and device simulations and characterize the electrical properties of a power MOSFET suitable for space applications.

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